• SUN Dongming
    Title:Professor,Thousand Young Talents Professor,National science fund for excellent young scholars of China. Email: dmsun@imr.ac.cn
    Tel. : +86-24-83973579 FAX: +86-24-83973579
    Division: Advanced Carbon Division, Shenyang National Laboratory for Materials Science
    Address: Advanced Carbon Division, Institute of Metal Research Chinese Academy of Sciences (IMR CAS), 72 Wenhua Road,Shenyang,China, 110016

Experience:

1997/09-2001/06: B.S., Department of Electronic Engineering, Jilin University.

2001/09-2006/06: Ph.D., State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University.

2006/09-2008/04: Postdoctoral researcher, Frontier Collaborative Research Center, Tokyo Institute of Technology.

2008/04-2009/03: Postdoctoral researcher, Precision and Intelligence Laboratory, Tokyo Institute of Technology.

2009/04-2012/05: Postdoctoral researcher, Department of Quantum Engineering, Nagoya University.

2012/06-Present: Professor, Advanced Carbon Division, Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences.

Research Interest:

1) Carbon nanotube- and graphene-based flexible electronics

2) Micro-electro-mechanical system and piezoelectric ultrasonic motor

3) Printing electronic devices

Research Achievement:

Flexible carbon nanotube thin-film transistors and integrated circuits

We presented a technique to fabricate high-performance flexible carbon nanotube thin-film transistors and integrated circuits using a floating catalyst chemical vapour deposition followed by a simple gas-phase filtration and transfer process. A carbon nanotube-based sequential integrated circuit is realized successfully.

Figure 1. Flexible carbon nanotube thin-film transistors and integrated circuits. a) Photograph of devices fabricated on a flexible and transparent polymer substrate. b) SEM image of carbon nanotube film. c) Transfer characteristics (ID-VGS) of a carbon nanotube thin-film transistor. d) Master-slave delay flip-flop. (Flexible high-performance carbon nanotube integrated circuits, Nature Nanotechnol. 2011, 6, 156-161)

Mouldable all-carbon thin-film transistors and integrated circuits.

We present a method to fabricate all-carbon thin-film transistors. We are able to realize mouldable, transparent and three-dimensional integrated circuits.

Figure 2. Mouldable all-carbon thin-film transistors and integrated circuits. a) Photograph of a dome-shaped all-carbon device after moulding process. b) SEM image of carbon nanotube channel and electrode. c) Transfer characteristics (ID-VGS) of an all-carbon nanotube thin-film transistor. d) A 1-bit static random access memory. (Mouldable all-carbon integrated circuits, Nature Commun. 2013, 4, 2302)

Service to the International Professional Societies:

Honors:

Publication:

1. Dong-ming Sun, et al., 2011, “Flexible high-performance carbon nanotube integrated circuits”, Nature Nanotechnol., 6, 156-161.

2. Dong-ming Sun, et al., 2013, “Mouldable all-carbon integrated circuits”, Nature Commun., 4, 2302.

3. Dong-Ming Sun, et al., 2013, “A review of carbon nanotube- and graphene-based flexible thin-film transistors”, Small, 9(8), 1188-1205.

4. Dongming Sun, et al., 2010, “Theoretical and experimental investigation of traveling wave propagation on a several-millimeter-long cylindrical pipe driven by piezoelectric ceramic tubes”, IEEE Trans. Ultrason., Ferroelectrics, Freq. Contr., 57(7), 1600-1611.

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